? ? ? ? ? features ? 1.9 ghz frequency band ? typical 33.5 dbm output power ? low power consumption 11 w typ. ? excellent adjacent leakage power ? typical 33 db power gain ? cost-effective metal package ? low thermal resistance structure ? ? ? ? ? applications ? final stage power amplifier of base station for phs ? ? ? ? ? description the P0531961H is a high performance 1.9 ghz band power amplifier module capable of 33.5 dbm output power with a typical 33 db gain at 1.9 ghz band, housed in a cost effective metal package. this device features a low power consumption owing to the excellent linear- ity and high gain of the pulse-doped gaas mesfet developed by sei, dissipating 1100 ma typical. it operates from +10 v and -5 v power supplies. P0531961H 1.9 ghz band power amplifier module 03.06.04
power amplifier module P0531961H ? ? ? ? ? absolute maximum ratings case temperature tc=25 c ? ? ? ? ? electrical specifications case temperature tc=25 c notes: operating of this device above any one of these parameters may cause permanent damage. *vg1,vg2=-5v parameter symbol test conditions frequency supply current (under operation) power gain harmonic distortion gate current input vswr id f ga 2f0 3f0 ig value min. typ. max. units 1920 mhz ma 31 db dbc 1880 -40 2.5 ma dbc -36 -50 15 1250 8 ?100 1.5 33 pout=33.5 dbm vd1=10 v vd2=10 v vg1=-5 v vg2=-5 v -50 adjacent channel leakage power padj1 padj2 -68 -64 dbc dbc 600 khz offset 900 khz offset -72 -69 in parameter symbol value units dc supply voltage 12 * v - 7 v input power operating case temperature topt -20 to + 80 c storage temperature tstg -40 to + 95 c vd1 , vd2 vg1 , vg2 pin 10 dbm
power amplifier module P0531961H ? power characteristics ? harmonic distortion 24 26 28 30 32 34 36 38 -10 -5 0 5 10 pout(dbm) ga(db) pin (dbm) pout (dbm), gain (db) f=1900 mhz vd1=vd2=10 v vg1=vg2=-5 v -90 -80 -70 -60 -50 -40 -30 24 26 28 30 32 34 36 pout(dbm) 2fo 3fo 2fo, 3fo (dbc) f=1900 mhz vd1=vd2=10 v vg1=vg2=-5 v
power amplifier module P0531961H ? adjacent channel leakage power, reverse im3 f=1900 mhz vd1=vd2=10 v vg1=vg2=-5 v rim3:f2=f1+2.7mhz pin2=-10dbm -90 -85 -80 -75 -70 -65 -60 24 26 28 30 32 34 36 pout (dbm) padj600khz offset padj900khz offset rim3 padj , rim3 (dbc)
power amplifier module P0531961H ? ? ? ? ? pin assignment (1) rfout (2) vd2 (3) vg2 (4) vd1 (5) vg1 (6) rfin case: gnd ? ? ? ? ? package drawings (dimensions are mm) electron device department P0531961H 29.0 26.4 0.1 22.0 13.0 5.0 4-r1.2 2.4 9.0 2.0 2.0 1.8 // 0.1 a a sumitomo electric :lot no. dimensions are mm 1.2 0.25 4.0 0.5 2.0 2.5 2.5 22.0 0.1 2.5 2.5 2.5 7.5 (1) (2) (3) (4) (5) (6)
power amplifier module P0531961H ? evaluation board layout (dimensions are mm) kp009j 42 44.2 rfout rfin vg1 vd1 vd2 vg2 rfout rfin vd2 vg 2 vg1 vd1 rf in rfout vd2 vg2 vd1 c2 c2 c2 designation value c1 1 f c2 0.1 f c2 vg1 c1 c1 c1 c1 c1 c2 c2 c2 c2 c1 c1 c1
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